1. |
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pn Junction Diode: Transient Response |
1) Small signal admittance in pn Junction diode.
2) Forward-bias diffusion admittance. |
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2. |
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Optoelectronic Diodes (Ch 9-1) |
1) Photonics.
2) Radiative transition
3) Optical absorption
4) Photo detectors
5) Solar cells |
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3. |
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Optoelectronic Diodes (Ch 9-2) |
1) Photonics.
2) Radiative transition
3) Optical absorption
4) Photo detectors
5) Solar cells |
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4. |
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BJT Fundamentals (Ch10-1) |
BJT fundamentals |
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5. |
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BJT Fundamentals (Ch10-2) |
1) Operational consideration
2) Performance parameters |
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6. |
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BJT Static characteristics (Ch11-1) |
1) Ideal transistor analysis
2) Simplified relationships
3) Performance parameters |
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7. |
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BJT Static characteristics (Ch11-2) |
1) Eblners-Moll equations and model
2) Derivation from the ideal
3) Punch-through |
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8. |
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BJT Static characteristics (Ch11-3) |
1) Eblners-Moll equations and model
2) Derivation from the ideal
3) Punch-through |
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9. |
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MS Contacts and Schottky Diodes (Ch14-1) |
1) Ideal MS contacts
2) Schottky diode |
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10. |
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MS Contacts and Schottky Diodes (Ch14-2) |
3) I-V characteristics
4) ac response |
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11. |
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Field Effect Introduction (Ch15-1) |
1) General information of the J-FET and MESFET
2) Biasing the JFET |
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12. |
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Field Effect Introduction (Ch15-2) |
3) ID-VD relationship
4) ID-VD characteristics |
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13. |
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MOS Fundamentals (Ch16-1) |
1) Electrostatics |
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14. |
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MOS Fundamentals (Ch16-2) |
2) Semiconductor electrostatics |
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15. |
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MOSFETs (Ch17-1) |
1) MOSFETs
2) Quantitative ID-VD relationships |
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MOSFETs (Ch17-2) |
3) Bulk-charge throry |
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