반도체공학II

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반도체공학II

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페이스북 트위터 카카오톡 네이버밴드 링크복사

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공학 >전기ㆍ전자 >전자공학
강의학기

2014년 1학기

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BJT, FET, 레이저, 스위칭 소자, 초고주파 소자 등 각종 반도체소자의 기본 성질 및 특성을 배우며 이를 기초로 하여 집적회로 구성을 위한 공정 integration의 기초를 다룬다.

<교재 및 출처>

Ben G. Streetman, “Solid State Electronic Devices (6th edition)

수강안내 및 수강신청
※ 수강확인증 발급을 위해서는 수강신청이 필요합니다

Review1

차시별 강의

1.	Review1	반도체공학I에서 배운 내용 Review
	Review2	반도체공학I에서 배운 내용 Review
2.	Optoelectronic Devices	1. PHOTODIODES 2. LIGHT-EMITTING DIODE
	Optoelectronic Devices	1. LASERS 2. TUNNEL DIODE
3.	Bipolar Junction Transistors	1. FUNDAMENTALS OF BJT OPERATION 2. AMPLIFICATION WITH BJTS
	Bipolar Junction Transistors	1. BJT FABRICATION 2. MINORITY CARRIER DISTRIBUTIONS AND TERMINAL CURRENT
4.	Generalized Bias	The Coupled-Diode Model
5.	p-n-p-n diode	1. THE p-n-p-n DIODE 2. THE SEMICONDUCTOR CONTROLLED RECTIFIER 3. TRANSISTOR OPERATION 4. THE JUNCTION FET
	THE METAL-INSULATOR-SEMICONDUCTOR FET	1. The GaAs MESFET 2. The High Electron Mobility Transistor (HEMT) 3. Short Channel Effects 4. Basic Operation and Fabrication
6.	Ideal MOS Capacitor	Ideal MOS Capacitor
	Ideal MOS Capacitor	Ideal MOS Capacitor
7.	Ideal MOS Capacitor	1. Definition of Small-Signal Capacitances 2. Capacitance-Voltage Characteristics of MOS Capacitor 3. Accumulation 4. Depletion 5. Low-Frequency C-V Characteristic: Inversion 6. High-Frequency C-V Characteristic: Inversion 7. Deep Depletion
	Effects of Real Surfaces	1. Effects of Real Surfaces 2. Threshold Voltage
8.	MOS Capacitance-Voltage Analysis	1. MOS Capacitance-Voltage Analysis 2. Time-dependent Capacitance Measurement 3. Current-Voltage Characteristics of MOS Gate Oxides
9.	THE MOS FIELD-EFFECT TRANSISTOR	1. Output Characteristics 2. Transfer Characteristics 3. Mobility Models
10.	THE MOS FIELD-EFFECT TRANSISTOR	1. Control of Threshold Voltage 2. Substrate Bias Effects (Body Effect) 3. Subthreshold Characteristics
11.	THE MOS FIELD-EFFECT TRANSISTOR	1. Equivalent Circuit for the MOSFET 2. MOSFET Scaling and Hot Electron Effects 3. Drain-Induced Barrier Lowering
	Integrated Circuits	1. BACKGROUND 2. EVOLUTION OF INTEGRATED CIRCUITS 3. MONOLITHIC DEVICE ELEMENTS
12.	ISRC 0.25 μm CMOS Process	ISRC 0.25 μm CMOS Process
	ISRC 0.25 μm CMOS Process	ISRC 0.25 μm CMOS Process
13.	Charge Transfer Devices	1. Dynamic Effects in MOS Capacitors 2. The Basic CCD 3. Logic Devices
	Semiconductor Memories	1. Organization of RAM 2. SRAM
14.	Semiconductor Memories	DRAM
15.	Semiconductor Memories	FLASH Memories
	Testing, Bonding, and Packaging	1. Testing 2. Wire Bonding 3. Flip-chip Techniques 4. Packaging