집적회로공정

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페이스북 트위터 카카오톡 네이버밴드 링크복사

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공학 >전기ㆍ전자 >전자공학
강의학기

2015년 2학기

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16,207
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1/5.0 (1)

강의계획서

Silicon CMOS 필수 공정에 대해 이해하고 차세대 MOSFET 공정에 대한 이해

차시별 강의

1.	Introduction	집적회로 공정이란 무엇인가
2.	집적회로공정 개요	집적회로 공정에 대한 전반적인 설명
	집적회로공정 개요	집적회로 공정에 대한 전반적인 설명
3.	반도체 공학기초	1. Dopants 2. Calculation of carrier concentration 3. Mobility and resistance
	반도체 공학기초	1. Sheet resistance (Rs) 2. Local oxidation of silicon (LOCOS)
4.	Isolation과 contact issue	1. Isolation methods 2. Contacts 3. Process flow of MOSFETs
	Isolation methods	1. Local oxidation of silicon (LOCOS) 2. Shallow trench isolation (STI) 3. Thermal oxidation
5.	Oxidation	1. Thermal oxidation 2. Properties of thermal SiO2 3. Modeling of thermal oxidation
6.	Oxidation	1. Modeling of thermal oxidation 2. Effect of impurities 3. Dopant redistribution
7.	Oxidation	Oxide charges
	Oxidation	1. Oxidation recipe 2. Oxidation source/method
8.	Ion implantation	1. Ion implantation 2. Concentration and dose 3. Energy loss mechanism
	Ion implantation	1. Dose vs. concentration 2. Junction depth 3. Sheet resistance of ion implanted layer 4. Ion channeling
9.	Ion implantation	1. Ion channeling 2. Implantation damage 3. Dopant activation
	Diffusion	1. Dopant diffusion 2. Diffusion mechanisms in Si 3. Diffusion process modeling
10.	Diffusion	1. High concentration diffusion effect 2. Oxidation enhanced diffusion (OED) 3. Sheet resistance
	Gate stack	1. Gate leakage current 2. Tunneling mechanisms 3. Evaluation of gate dielectric thickness 4. Equivalent oxide thickness (EOT) 5. High-k gate dielectric
11.	Gate stack	1. Gate leakage current 2. Tunneling mechanisms 3. Evaluation of gate dielectric thickness 4. Equivalent oxide thickness (EOT) 5. High-k gate dielectric
12.	Photolithography	1. Photolithography 2. Photomask layout 3. Photoresist / lift-off 4. Theory of photolithography
13.	Metallization	1. Interconnection RC time delay 2. Contact resistance 3. Aluminum metallization
14.	Metallization	1. Problems of aluminum metallization 2. Silicide process 3. Surface planarization 4. Damascene process
	Metallization/Scaling of CMOS	1. Self-aligned source and drain 2. Lightly doped drain (LDD) 3. Salicide process 4. Scaling trend of CMOS