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나노소자공학

건국대학교
Ishiwara Hiroshi

페이스북 트위터 카카오톡 네이버밴드 링크복사

주제분류

자연과학 >수학ㆍ물리ㆍ천문ㆍ지리 >물리학
강의학기

2013년 1학기

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나노소자 구조의 고안, 소재 처리, 제조 공정, 특성 분석, 집적화 방법 등을 가르친다. 특히, 최근에

제안된 나노구조 신소자 모듈의 집적화 공정이 발전해 온 과정을 다룬다.

수강안내 및 수강신청
※ 수강확인증 발급을 위해서는 수강신청이 필요합니다

Energy band theory in solids

차시별 강의

1.	Energy band theory in solids	electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity semiconductors
	Energy band theory in solids	electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity semiconductors
	Energy band theory in solids	electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity semiconductors
	Energy band theory in solids	electron & hole of semiconductor, energy band diagram, density of states, intrinsic carrier concentrations, impurity semiconductors
2.	Electrical properties of semiocnductors	deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation
	Electrical properties of semiocnductors	deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation
	Electrical properties of semiocnductors	deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation
	Electrical properties of semiocnductors	deduction method of carrier in the real semiconductor, drift and diffusion currents, life time of minority carriers, continuity equation
3.	Current-voltage characteristics of pn junctions	built-in potential, diffusion theory, forward- and backward-bias conditions, depletion layer
	Current-voltage characteristics of pn junctions	built-in potential, diffusion theory, forward- and backward-bias conditions, depletion layer
	Current-voltage characteristics of pn junctions	built-in potential, diffusion theory, forward- and backward-bias conditions, depletion layer
4.	Capacitance- voltage and other characteristics of pn junctions	capacitance in abrupt junction, Poison's equation, breakdown mechanism, tunnel diodes
	Capacitance- voltage and other characteristics of pn junctions	capacitance in abrupt junction, Poison's equation, breakdown mechanism, tunnel diodes
	Capacitance- voltage and other characteristics of pn junctions	capacitance in abrupt junction, Poison's equation, breakdown mechanism, tunnel diodes
	Capacitance- voltage and other characteristics of pn junctions	capacitance in abrupt junction, Poison's equation, breakdown mechanism, tunnel diodes
5.	Schottky diodes and fabrication of semiconductor devices	metal-semiconductor junction, thermionic emission, lithography, impurity doping
	Schottky diodes and fabrication of semiconductor devices	metal-semiconductor junction, thermionic emission, lithography, impurity doping
	Schottky diodes and fabrication of semiconductor devices	metal-semiconductor junction, thermionic emission, lithography, impurity doping
	Schottky diodes and fabrication of semiconductor devices	metal-semiconductor junction, thermionic emission, lithography, impurity doping
6.	Operation principle of bipolar transistors Ⅰ	emitter, base, collector, current transmission efficiency
	Operation principle of bipolar transistors Ⅰ	emitter, base, collector, current transmission efficiency
	Operation principle of bipolar transistors Ⅰ	emitter, base, collector, current transmission efficiency
	Operation principle of bipolar transistors Ⅰ	emitter, base, collector, current transmission efficiency
7.	Operation principle of bipolar transistors Ⅱ	current amplification factor, switching characteristics and bipolar integrated circuits
	Operation principle of bipolar transistors Ⅱ	current amplification factor, switching characteristics and bipolar integrated circuits
	Operation principle of bipolar transistors Ⅱ	current amplification factor, switching characteristics and bipolar integrated circuits
	Operation principle of bipolar transistors Ⅱ	current amplification factor, switching characteristics and bipolar integrated circuits
8.	Operation principle of bipolar transistors Ⅲ	bipolar power devices, breakover characteristics, thyristor
	Operation principle of bipolar transistors Ⅲ	bipolar power devices, breakover characteristics, thyristor
9.	Characteristics of MOS diodes Ⅰ	ideal MOS diodes, accumulation, depletion
10.	Characteritics of MOS diodes Ⅱ	inversion conditions, surface potential, threshold voltage, pulse response of MOS capacitance, deep depletion
	Characteritics of MOS diodes Ⅱ	inversion conditions, surface potential, threshold voltage, pulse response of MOS capacitance, deep depletion
	Characteritics of MOS diodes Ⅱ	inversion conditions, surface potential, threshold voltage, pulse response of MOS capacitance, deep depletion
	Characteritics of MOS diodes Ⅱ	inversion conditions, surface potential, threshold voltage, pulse response of MOS capacitance, deep depletion
11.	Characreristics of MOSFETs	pinch-off, ID - VG and ID - VD characteristics, subthreshold characterisics
	Characreristics of MOSFETs	pinch-off, ID - VG and ID - VD characteristics, subthreshold characterisics
	Characreristics of MOSFETs	pinch-off, ID - VG and ID - VD characteristics, subthreshold characterisics
12.	CMOS basic circuits	resistor-load inverter circuits, CMOS inverter circuits, NAND and NOR circuits
	CMOS basic circuits	resistor-load inverter circuits, CMOS inverter circuits, NAND and NOR circuits