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Energy band theory in solids (1) |
energy band diagram, density of states, intrinsic carrier concentrations, impurity
semiconductors |
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Energy band theory in solids (2) |
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Energy band theory in solids (3) |
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Energy band theory in solids (4) |
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| 2. |
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Electrical properties of semiconductors (1) |
drift and diffusion currents, life time of minority carriers, continuity equation |
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Electrical properties of semiconductors (2) |
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Electrical properties of semiconductors (3) |
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| 3. |
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Current-voltage characteristics of pn junctions (1) |
built-in potential, diffusion theory, forward- and backward-bias conditions, depletion layer |
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Current-voltage characteristics of pn junctions (2) |
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Current-voltage characteristics of pn junctions (3) |
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Current-voltage characteristics of pn junctions (4) |
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| 4. |
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Capacitance-voltage and other characteristics of pn junctions (1) |
capacitance in abrupt junction, Poisons equation, breakdown mechanism, tunnel diodes |
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Capacitance-voltage and other characteristics of pn junctions (2) |
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Capacitance-voltage and other characteristics of pn junctions (3) |
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| 5. |
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Schottky diodes and fabrication of semiconductor devices (1) |
metal-semiconductor junction,
thermionic emission, lithography, impurity doping |
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Schottky diodes and fabrication of semiconductor devices (2) |
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Schottky diodes and fabrication of semiconductor devices (3) |
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Schottky diodes and fabrication of semiconductor devices (4) |
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| 6. |
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Operation principle of bipolar transistors (1) |
emitter, base, collector, current
transmission efficiency, current
amplification factor |
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Operation principle of bipolar transistors (2) |
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Operation principle of bipolar transistors (3) |
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Operation principle of bipolar transistors (4) |
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| 7. |
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Switching characteristics and bipolar integrated circuits(Ⅰ) (1) |
saturation and cut-off states, constant current source, operational amplifier, TTL |
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Switching characteristics and bipolar integrated circuits(Ⅰ) (2) |
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Switching characteristics and bipolar integrated circuits(Ⅰ) (3) |
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Switching characteristics and bipolar integrated circuits(Ⅰ) (4) |
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| 8. |
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Mid-term examination |
Presentation |
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| 9. |
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Switching characteristics and bipolar integrated circuits(Ⅱ) (1) |
saturation and cut-off states, constant current source, operational amplifier, TTL |
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Switching characteristics and bipolar integrated circuits(Ⅱ) (2) |
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Switching characteristics and bipolar integrated circuits(Ⅱ) (3) |
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| 10. |
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Bipolar power devices (1) |
breakover characteristics, thyristor, GTO |
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Bipolar power devices (2) |
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| 11. |
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Characteristics of MOS diodes (Ⅰ) (1) |
ideal MOS diodes, accumulation,
depletion, and inversion conditions |
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Characteristics of MOS diodes (Ⅰ) (2) |
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Characteristics of MOS diodes (Ⅰ) (3) |
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Characteristics of MOS diodes (Ⅰ) (4) |
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| 12. |
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Characteritics of MOS diodes (Ⅱ) (1) |
surface potential, threshold voltage,
pulse response of MOS capacitance,
deep depletion |
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Characteritics of MOS diodes (Ⅱ) (2) |
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Characteritics of MOS diodes (Ⅱ) (3) |
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Characteritics of MOS diodes (Ⅱ) (4) |
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| 13. |
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Characreristics of MOSFETs (1) |
pinch-off, ID - VG and ID - VD
characteristics, subthreshold
characterisics |
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Characreristics of MOSFETs (2) |
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Characreristics of MOSFETs (3) |
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| 14. |
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CMOS basic circuits (1) |
resistor-load inverter circuits, CMOS
inverter circuits, NAND and NOR circuits |
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CMOS basic circuits (2) |
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CMOS basic circuits (3) |
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CMOS basic circuits (4) |
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| 15. |
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Logic and memory Ics (1) |
microprocessors, FPGA, SRAM, DRAM,
nonvolatile memories |
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Logic and memory Ics (2) |
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| 16. |
![]() |
Final-term exam |
Final-term exam |
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대구광역시 동구 동내로 64(동내동 1119) 우)41061
페이스북
트위터
카카오톡
네이버밴드
링크복사
