1. |
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Basic Physics |
4.3 Reverse-biased PN junction
4.4 Capacitance-Voltage Characteristics
4.6 Carrier Injection under forward Bias-Quasi-Equilibrium boundary Cond. |
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2. |
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PN Junctions |
4.7 Current Continuity Equation
4.8 Excess Carriers in Forward-Bias
4.9 PN Diode IV Characteristics
4.9.1 Contributions from Depletion Regions |
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3. |
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Metal-Semiconductor Junctions |
4.0 Schottky Junction |
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4. |
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Application to optoelectronic devices |
4.12.1 Solar cell basics
4.12.2 Light penetration Depth |
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5. |
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Application to optoelectronic devices |
4.12.1 Solar cell basics
4.12.2 Direct-/Indirect-Gap semiconductor
4.12.3 Short-Circuit current, Isc
4.12.3 Open-Circuit Voltage, Voc
4.12.4 Output power
4.13 Light-Emitting Diodes(LEDs) |
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6. |
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MOS Capacitor |
5.1 Flat-Band condition/voltage
5.2 Surface Accumulation
5.3 Surface Depletion
5.4 Threshold condition/voltage |
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7. |
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MOS Capacitor |
5.1 Flat-Band condition/voltage
5.2 Surface Accumulation
5.3 Surface Depletion
5.4 Threshold condition/voltage |
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8. |
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MOS Capacitor |
5.5 Strong Inversion beyond threshold
5.5.1 Choice of Vt and Gate doping Type
5.6 MOS C-V Chraacteristics |
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9. |
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MOS Capacitor |
5.8 Poly-Si gate depletion-effective increase in tox
5.9 Inversion and Accumulation Charge-Layer 쏴
5.7 Oxide Charge |
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10. |
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MOS Transistor |
6.1 introduction to the MOSFET
6.2 Complementary MOS(CMOS) Technology
6.3 Surface Mobilities |
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11. |
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MOS Transistor |
6.4 MOSFET Vt, Body effect, and steep retrograding doping
6.5 Q_INV in MOSFET
6.6 Basic MOSFET I-V model |
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12. |
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MOS Transistor |
6.6 Basic MOSFET I-V model
6.8 Velocity Saturation
6.9 MOSFET I-V Model with Velocity Saturation |
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13. |
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MOS Transistor |
6.9 MOSFET I-V Model with Velocity Saturation
6.10 Parasitic source-Drain Resistances |
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14. |
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MOS Transistor |
6.11 Extraction on Rsd and Leff
6.13 Output Conductance
6.14 High-Frequency performance |
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15. |
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MOSFETs in Ics-Scaling, Leakage, and Other Topics |
7.1 Technology Scaling
7.2 Subthreshold Current |
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