| 1. |
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Introduction |
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| 2. |
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Ch.1 - semiconductor |
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Ch.1 - Bond model |
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| 3. |
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Ch.1 - band model |
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| 4. |
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Ch.1 - electron hole concentration |
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Ch. 1 - doping / Ch. 2 - electron motion |
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| 5. |
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Ch. 2 - resistivity |
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Ch. 2 - Band bending |
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| 6. |
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Ch. 2 - generation and recombination |
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Ch. 4 - pn junction electrostatics 1 |
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| 7. |
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Ch. 4 - pn junction electrostatics 2 |
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| 8. |
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Ch. 4 - reverse bias |
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Ch. 4 - forward bias 1 |
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| 9. |
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Ch. 4 - forward bias 2 |
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Ch. 4 - solar cell, LED |
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| 10. |
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Ch. 4 - metal-semiconductor contact |
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| 11. |
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Ch. 5 - MOS capacitor 1 |
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Ch. 5 - MOS capacitor 2 |
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| 12. |
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Ch. 5 - C-V plot |
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Ch. 5 - CCD, CIS / Ch. 6 - MOS FET 소개 |
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| 13. |
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Ch. 6 - CMOS |
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Ch. 6 - MOS FET 동작원리 |
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| 14. |
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Ch. 6 - SRAM, DRAM, |
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| 15. |
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Ch. 6 - Nonvolatile memory (NAND) |
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대구광역시 동구 동내로 64(동내동 1119) 우)41061
페이스북
트위터
카카오톡
네이버밴드
링크복사
